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TD Memory Quality and Reliability PhD Intern

Location
US, California, Folsom
Compensation
Not disclosed
Level
intern
Type
internship

Posted by employer 1 week ago

First seen on Joblaze 1 week ago

Last verified on the company career page 22 hours ago

Apply at Intel → Save job Scanned from intel.com

Requirements

Education
PhD

Not disclosed in this posting: compensation, years of experience, work arrangement, visa sponsorship.

Joblaze summary

The TD Memory Quality and Reliability PhD Intern at Intel focuses on conducting research and analysis to enhance memory quality and reliability in semiconductor products. This role requires expertise in semiconductor physics, reliability testing, and data analysis, along with proficiency in programming languages such as Python or MATLAB. It is well-suited for advanced graduate students or recent PhD graduates with a strong background in electrical engineering or materials science. The intern will collaborate with a team dedicated to improving product performance in a leading technology company.

Joblaze insights

  • Listed 8 days ago — first seen on Joblaze October 31, 2026. Last confirmed on Intel's careers page November 8, 2026.

Quick facts

What seniority level is this role?
Intel targets intern candidates for this position.
Is this full-time or contract?
Internship for this TD Memory Quality and Reliability PhD Intern role at Intel.

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